Laser source | Laser diode | |||||
Optical parameters | ||||||
Typical wavelength | 405 | 450 | 488 | 520 | 638 | 660 |
Vis. | ✔ | ✔ | ✔ | |||
BIO1 | ✔ | ✔ | ✔ | |||
BIO2 | ✔ | ✔ | ✔ | |||
Ind. | ✔ | ✔ | ✔ | |||
Output power (mW) | 120 | 100 | 50/80 | 100 | 150 | 110 |
Power stability 8 h (P-P) | < 3% | |||||
Spot size @1m | Ф95%≤2mm | |||||
Typical beam divergence | ≤1mrad | |||||
Beam alignment accuracy | The beams coincide exactly | |||||
Spatial mode | TEM 00 | |||||
M2 | < 1.1 | |||||
Direction stability | ||||||
Optical noise RMS, 20Hz – 20MHz | < 0.5 % | |||||
Electrical parameters* | ||||||
Operating current* | 130mA | 90mA | 105mA | 150mA | 215mA | 140mA |
Operating voltage* | 5V | 5.5V | 6V | 6.5V | 2.6V | 2.5V |
Laser operation modes | CW, modulated | |||||
Digital modulation | TTL input | |||||
Digital modulation frequencies | 1 MHz | |||||
Digital rise time 10 – 90% | 11 ns | |||||
Digital fall time 90 – 10% | 11 ns | |||||
Analog modulation bandwidth | 0 – 3.3 V input voltage | |||||
Analog modulation frequencies | 20 KHz | |||||
Analog rise time 10 – 90% | 12 µsec | |||||
Analog fall time 90 – 10% | 12 µsec | |||||
Laser safety class | 3B | |||||
Max. storage temperature range | - 10° C to + 60° C | |||||
Operational temperature range | + 10° C to + 40° C | |||||
Temperature stabilization | internal TEC controlled |